Education

September 2015–June 2019,  Huazhong University of Science and Technology,  Bachelor of Science in Integrated Circuit Design and Integrated Systems

September 2019–December 2024,  Fudan University,  Doctor of Philosophy in Microelectronics and Solid-State Electronics

Work

Currently employed at HiSilicon Technologies Co., Ltd. as a RF Chip Engineer, responsible for research and design of RF broadband transceiver front-end circuits.

Research

Paper：

[1] HaoXu, JunyanBi, T. Zou et al.,  A 5-16GHz Reconfigurable Quadrature Receiver with Multi-Phase Clock Generation and IQ-Leakage Suppression, ISSCC-2024.

[2] T. Zou et al., A 6–12 GHz Wideband Low-Noise Amplifier With 0.8–1.5 dB NF and ±0.75 dB Ripple Enabled by the Capacitor Assisting Triple-Winding Transformer, in IEEE Transactions on Circuits and Systems I: Regular Papers (TCAS I), vol. 70, no. 7, pp. 2802-2813, July 2023.

[3] T. Zou et al., A Capacitor Assisting Triple-Winding Transformer Low-Noise Amplifier with 0.8-1.5dB NF 6-12GHz BW ± 0.75 dB Ripple in 130nm SOI CMOS, 2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), Denver, CO, USA, 2022, pp. 231-234.

[4] Y. Wang, T. Zou, B. Chen, S. Ji, C. Zhang and N. Yan, A 7.9-14.3GHz -243.3dB FoMT Sub-Sampling PLL with Transformer-Based Dual-Mode VCO in 40nm CMOS, 2021 IEEE Asian Solid-State Circuits Conference (A-SSCC), Busan, Korea, Republic of, 2021, pp. 1-3.

[5] J. Xue, T.Zou et al., A 6-18GHz Low-Noise Amplifier Using Noise Canceling Technique in 130-nm CMOS PD-SOI, 2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA), Xi'an, China, 2022, pp. 46-47.

[6] Y. Wang et al., Analysis and Design of a Dual-Mode VCO With Inherent Mode Compensation Enabling a 7.9–14.3-GHz 85-fs-rms Jitter PLL, in IEEE Journal of Solid-State Circuits (JSSC), vol. 58, no. 8, pp. 2252-2266, Aug. 2023.

Patent：

[1] 一种高平坦度的级间匹配电路:CN202111322728.2[P]. 2022-02-25. （第一发明人）

[2] 一种电容辅助三线圈变压器电路:CN202210238626.0[P]. 2022-07-22. （第一发明人）

[3] 一种基于恒定跨导偏置的放大器电路辐照加固方法:CN202111322726.3[P]. 2022-02-25.（第一发明人）

[4] 一种硅边墙SOI抗辐照MOS器件结构:CN202111322720.6[P]. 2022-03-04.（第一发明人）

[5] 一种基于功率检测的抗辐照电路:CN202111322721.0[P]. 2022-03-04. （第一发明人）

Honors

2023 Fudan University Outstanding Student

2022 Fudan University Outstanding Student Cadre

2020-2022 Outstanding Party Member of Student Party Branch

2022 Anqiwei Distinguished Award

2022 First Prize, Doctoral Student Outstanding Academic Scholarship

2020-2021 Second Prize, Outstanding Doctoral Student Academic Scholarship

2019 Outstanding Graduate, Huazhong University of Science and Technology

2018 Grand Prize, Unisoc Cup, 2nd National College Students' Integrated Circuit Innovation and Entrepreneurship Competition