【JSSC】Qin Haoqi: A 25-31-GHz Compact True Power Detector With >33-dB Dynamic Range and Intrinsic Phase Offset Compensation in 40-nm Bulk CMOS

The research team proposes a compact power detector with voltage-standing-wave-ratio resilience based on self-mixer. By improving the power sensing method, the voltage and current coupling are implemented at the primary coil of the power amplifier, which ensures the single-ended power amplifier output and the symmetry of power detection. This work also exploits the intrinsic phase compensation method during power sensing, which optimizes the power sensing error at a mismatched load impedance. The self-mixer incorporates the current bleeding technique to improve the noise and linearity performance, increasing the dynamic range of power detection. The chip of the power amplifier integrated with the power detector is fabricated in 40nm CMOS process. The core of power detector only occupies an area of 3520μm2 and has a dynamic range larger than 33dB within the frequency band of 25 to 31GHz.

The results are published by the top international journal, 2025 JSSC. The first author is master student Haoqi Qin from the school of microelectronics, Fudan University.

Paper Link: Qin, H., Gu, J., Xu, H., Xu, Z., Jia, P., & Yan, N. (2025). A 25-31-GHz Compact True Power Detector With >33-dB Dynamic Range and Intrinsic Phase Offset Compensation in 40-nm Bulk CMOS. IEEE Journal of Solid-State Circuits, 60(5), 1570–1583. https://doi.org/10.1109/JSSC.2025.3531911